Electro-Optic Modulator Based on Photolithography Fabricated p-i-n Integrated Photonic Crystal Nanocavity

被引:8
|
作者
Daud, Nurul Ashikin Binti [1 ]
Ooka, Yuta [1 ]
Tabata, Tomohisa [1 ]
Tetsumoto, Tomohiro [1 ]
Tanabe, Takasumi [1 ]
机构
[1] Keio Univ, Fac Sci & Technol, Dept Elect & Elect Engn, Yokohama, Kanagawa 2238522, Japan
来源
IEICE TRANSACTIONS ON ELECTRONICS | 2017年 / E100C卷 / 08期
关键词
photonic crystal; electro-optic devices; integrated optics; modulators; nanophotonics; opto-electronics; SILICON OPTICAL MODULATORS; CARRIER DEPLETION; WAVE-GUIDE;
D O I
10.1587/transele.E100.C.670
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present the first demonstration of an electro-optic modulator based on a photolithographically fabricated photonic crystal (PhC) nanocavity with a p-i-n junction with SiO2 cladding. We show that the device exhibits an ultrahigh quality factor (Q similar to 10(5)) and allow us to demonstrate electro-optic modulation through the integrated p-i-n diode structure. We demonstrate an electro-optic modulation based on the carrier injection.
引用
收藏
页码:670 / 674
页数:5
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