Deposited silicon high-speed integrated electro-optic modulator

被引:93
|
作者
Preston, Kyle [1 ]
Manipatruni, Sasikanth [1 ]
Gondarenko, Alexander [2 ]
Poitras, Carl B. [1 ]
Lipson, Michal [1 ]
机构
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
来源
OPTICS EXPRESS | 2009年 / 17卷 / 07期
基金
美国国家科学基金会;
关键词
CARRIER-DEPLETION; OPTICAL MODULATION; ON-CHIP; RESONATORS; COMPACT;
D O I
10.1364/OE.17.005118
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate a micrometer-scale electro-optic modulator operating at 2.5 Gbps and 10 dB extinction ratio that is fabricated entirely from deposited silicon. The polycrystalline silicon material exhibits properties that simultaneously enable high quality factor optical resonators and sub-nanosecond electrical carrier injection. We use an embedded p(+)n(-)n(+) diode to achieve optical modulation using the free carrier plasma dispersion effect. Active optical devices in a deposited microelectronic material can break the dependence on the traditional single layer silicon-on-insulator platform and help lead to monolithic large-scale integration of photonic networks on a microprocessor chip. (C) 2009 Optical Society of America
引用
收藏
页码:5118 / 5124
页数:7
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