High-Speed Silicon Electro-Optic Microring Modulator for Optical Interconnects

被引：19

作者：

Malacarne, Antonio ^{[1
]}

Gambini, Fabrizio ^{[1
]}

Faralli, Stefano ^{[2
]}

Klamkin, Jonathan ^{[3
]}

Poti, Luca ^{[1
]}

机构：

[1] Consorzio Nazl Interuniv Telecomunicaz, Natl Lab Photon Networks, I-56124 Pisa, Italy

[2] Scuola Super Sant Anna, I-56124 Pisa, Italy

[3] Boston Univ, Boston, MA 02215 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2014年 / 26卷 / 10期

关键词：

Electro-optic modulators; integrated optoelectronics; photonic integrated circuits; silicon-on-insulator;

D O I：

10.1109/LPT.2014.2313040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon microring modulator for ON-OFF keying intensity modulation is presented and experimentally characterized. Modulation operation is based on carrier depletion effect in a p-n junction. The resonance wavelength shift is measured for bias voltages in the range between 0 and -7 V and modulation is demonstrated by employing electrical signals with data rates of 25 and 30 Gb/s and peak-to-peak voltage of 3.75 V. Performance in terms of bit error rate as a function of the optical signal-to-noise ratio for point-to-point transmission over 10 km of single mode fiber at both the data rates is experimentally evaluated, manifesting to be suitable for short-and medium-reach optical interconnects applications.

引用

页码：1042 / 1044

页数：3

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