Bitline Separated Gated Multi-Bit (BS-GMB) SONOS for High Density Flash Memory

被引：0
|
作者：
Shim, Won Bo [1 ]
Kim, Seunghyun [1 ]
Kim, Yoon [1 ]
Park, Se Hwan [1 ]
Kim, Sungjun [1 ]
Park, Euyhwan [1 ]
Park, Byung-Gook [1 ]
机构：
[1] Seoul Natl Univ, ISRC, Seoul 151742, South Korea
来源：
2012 12TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2012年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel bitline separated gated multi-bit (BS-GMB) SONOS memory for high density flash memory is newly introduced. Bitline separation method can decrease the number of gate contacts, and simplify the gate contact interconnection. 2N memory nodes with single crystalline silicon channel can be realized in 8F(2) size with this structure.
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页数：4
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