Multi-Bit Storage Based on Chalcogenide Thin Film Transistor for High Density Nonvolatile Memory Application

被引：3
|
作者：
Cai, Yanfei
Zhou, Peng [1 ]
Tang, Tingao
Gao, Charles
Lin, Yinyin
机构：
[1] Fudan Univ, Sch Microelect, Semicond Memory & Applicat Ctr, ASIC, Shanghai 200433, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2009年 / 110卷
基金：
中国国家自然科学基金;
关键词：
PHASE-CHANGE; ELECTRICAL-PROPERTIES;
D O I：
10.1080/10584580903435323
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The multi-bit storage realization based on chalcogenide thin film transistor is put forward first here, in which the chalcogenide film acts as not only phase change material but also semiconductor layer. The channel length of thin film transistor was modified by reversible phase change between amorphous and crystalline of chalcogenide thin film adjacent to source and drain. Consequently different read-out current can be achieved to realize multi-bit storage in one single cell.
引用
收藏
页码：34 / 42
页数：9
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