Temperature dependent current-voltage (I-V) characteristics of Al/n-Cadmium Selenide-Polyvinyl alcohol (Al/n-CdSe-PVA) Schottky diode

被引：0

作者：

Sharma, Mamta ^{[1
]}

Tripathi, S. K. ^{[1
]}

机构：

[1] Panjab Univ, Ctr Adv Study Phys, Dept Phys, Chandigarh 160014, India

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2012年 / 6卷 / 1-2期

关键词：

Barrier height; Nanocomposite; Schottky diode; Nanorods; Polymer; POLYMER-BASED NANOCOMPOSITES; OPTICAL-PROPERTIES; FILMS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper reports the fabrication and characterization of Al/n-Cadmium Selenide -Polyvinyl Alcohol (Al/n-CdSe-PVA) Schottky diode. I-V characteristics have been measured at different temperatures in the forward and reverse bias. The different parameters like ideality factor (n), the effective barrier height (phi(b)), the Richardson constant (A*) has been calculated. Temperature dependent barrier height and ideality factor is also studied. The series resistance (R-S) is calculated by using the Cheung's method. The reverse biased leakage current with the temperature have played important role in inhomogeneity of the barrier height. The recombination - tunneling mechanism is used to explain the conduction process in Schottky diode.

引用

页码：200 / 204

页数：5

共 50 条

[31] Temperature dependent I-V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung's model
Korucu, Demet
Turut, Abdulmecit
Efeoglu, Hasan
PHYSICA B-CONDENSED MATTER, 2013, 414 : 35 - 41
[32] Electrical Characteristics of an Ag/n-InP Schottky Diode Based on Temperature-Dependent Current-Voltage and Capacitance-Voltage Measurements
Gulnahar, Murat
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2015, 46A (09): : 3960 - 3971
[33] Statistical Analysis of the Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of the Au/Ir/n-InGaN Schottky Barrier Diodes
Padma, R.
Reddy, V. Rajagopal
ADVANCED SCIENCE LETTERS, 2018, 24 (08) : 5582 - 5586
[34] Temperature-dependent current-voltage characteristics of Se Schottky contact to n-type Ge
Janardhanam, V.
Jyothi, I.
Ahn, Kwang-Soon
Choi, Chel-Jong
THIN SOLID FILMS, 2013, 546 : 63 - 68
[35] Temperature-dependent current-voltage and capacitance-voltage characteristics of the Ag/n-InP/In Schottky diodes
Cimilli, F. E.
Efeoglu, H.
Saglam, M.
Tueruet, A.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2009, 20 (02) : 105 - 112
[36] Temperature dependent current-voltage characteristics of Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices
Erdal, Mehmet Okan
Kocyigit, Adem
Yildirim, Murat
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 103
[37] A simplified current-voltage (I-V) characteristics model with quantum mechanical effects for n-channel MOSFET
Abebe, Henok
Tyree, Vance
Cumberbatch, Ellis
Morris, Hedley
WMSCI 2005: 9th World Multi-Conference on Systemics, Cybernetics and Informatics, Vol 6, 2005, : 211 - 214
[38] 60Co γ irradiation effects on the current-voltage (I-V) characteristics of Al/SiO2/P-Si (MIS) Schottky diodes
Tataroglu, A.
Altindal, S.
Bulbul, M. M.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2006, 568 (02): : 863 - 868
[39] Annealing effect on I-V and C-V characteristics of Al/n-InP Schottky diodes at low temperatures
Catir, Fulya Esra Cimilli
Saglam, Mustafa
MATERIALS TODAY-PROCEEDINGS, 2021, 46 : 6979 - 6985
[40] Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes
Nath, A.
Rao, Mulpuri V.
Moscatelli, F.
Puzzanghera, M.
Mancarella, F.
Nipoti, R.
2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014), 2014,

← 1 2 3 4 5 →