Temperature dependent current-voltage (I-V) characteristics of Al/n-Cadmium Selenide-Polyvinyl alcohol (Al/n-CdSe-PVA) Schottky diode

被引：0

作者：

Sharma, Mamta ^{[1
]}

Tripathi, S. K. ^{[1
]}

机构：

[1] Panjab Univ, Ctr Adv Study Phys, Dept Phys, Chandigarh 160014, India

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2012年 / 6卷 / 1-2期

关键词：

Barrier height; Nanocomposite; Schottky diode; Nanorods; Polymer; POLYMER-BASED NANOCOMPOSITES; OPTICAL-PROPERTIES; FILMS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper reports the fabrication and characterization of Al/n-Cadmium Selenide -Polyvinyl Alcohol (Al/n-CdSe-PVA) Schottky diode. I-V characteristics have been measured at different temperatures in the forward and reverse bias. The different parameters like ideality factor (n), the effective barrier height (phi(b)), the Richardson constant (A*) has been calculated. Temperature dependent barrier height and ideality factor is also studied. The series resistance (R-S) is calculated by using the Cheung's method. The reverse biased leakage current with the temperature have played important role in inhomogeneity of the barrier height. The recombination - tunneling mechanism is used to explain the conduction process in Schottky diode.

引用

页码：200 / 204

页数：5

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