Characterization of intrinsic defects in high-purity high-resistivity p-type 6H-SiC

The densities, cross sections, and energy levels of intrinsic defects in high-purity high-resistivity (approximately 10(6)Omega cm) p-type 6H-SiC are determined using isothermal capacitance transient spectroscopy (ICTS). Five intrinsic defects are detected ranging from 0.76 to 1.35 eV above the valence band. Since the sum of the densities of intrinsic defects detected is the same order of magnitude as the acceptor density in the p-type 6H-SiC, the intrinsic defects are found to decrease the majority-carrier concentration makim its resistivity as high as approximately 10(6)Omega cm.