Characterization of intrinsic defects in high-purity high-resistivity p-type 6H-SiC

被引：6

作者：

Matsuura, Hideharu ^{[1
]}

Yanase, Hirokazu ^{[1
]}

Takahashi, Miyuki ^{[1
]}

机构：

[1] Osaka Electrocommun Univ, Dept Elect Engn & Comp Sci, Osaka 5728530, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 09期

基金：

日本学术振兴会;

关键词：

high-resistivity SiC; high-purity SiC; p-type SiC; 6H-SiC; deep level; hole trap; ICTS; intrinsic defect;

D O I：

10.1143/JJAP.47.7052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The densities, cross sections, and energy levels of intrinsic defects in high-purity high-resistivity (approximately 10(6)Omega cm) p-type 6H-SiC are determined using isothermal capacitance transient spectroscopy (ICTS). Five intrinsic defects are detected ranging from 0.76 to 1.35 eV above the valence band. Since the sum of the densities of intrinsic defects detected is the same order of magnitude as the acceptor density in the p-type 6H-SiC, the intrinsic defects are found to decrease the majority-carrier concentration makim its resistivity as high as approximately 10(6)Omega cm.

引用

页码：7052 / 7055

页数：4

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