Characterization of intrinsic defects in high-purity high-resistivity p-type 6H-SiC

被引：6

作者：

Matsuura, Hideharu ^{[1
]}

Yanase, Hirokazu ^{[1
]}

Takahashi, Miyuki ^{[1
]}

机构：

[1] Osaka Electrocommun Univ, Dept Elect Engn & Comp Sci, Osaka 5728530, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 09期

基金：

日本学术振兴会;

关键词：

high-resistivity SiC; high-purity SiC; p-type SiC; 6H-SiC; deep level; hole trap; ICTS; intrinsic defect;

D O I：

10.1143/JJAP.47.7052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The densities, cross sections, and energy levels of intrinsic defects in high-purity high-resistivity (approximately 10(6)Omega cm) p-type 6H-SiC are determined using isothermal capacitance transient spectroscopy (ICTS). Five intrinsic defects are detected ranging from 0.76 to 1.35 eV above the valence band. Since the sum of the densities of intrinsic defects detected is the same order of magnitude as the acceptor density in the p-type 6H-SiC, the intrinsic defects are found to decrease the majority-carrier concentration makim its resistivity as high as approximately 10(6)Omega cm.

引用

页码：7052 / 7055

页数：4

共 50 条

[31] Micromachining of p-type 6H-SiC by electrochemical etching
Chang, WH
SENSORS AND ACTUATORS A-PHYSICAL, 2004, 112 (01) : 36 - 43
[32] Piezoresistance behaviors of p-type 6H-SiC nanowires
Gao, Fengmei
Zheng, Jinju
Wang, Mingfang
Wei, Guodong
Yang, Weiyou
CHEMICAL COMMUNICATIONS, 2011, 47 (43) : 11993 - 11995
[33] Improved ohmic contacts to p-type 6H-SiC
Spiess, L
Nennewitz, O
Pezoldt, J
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 585 - 588
[34] P-type 4H and 6H-SiC high-voltage Schottky barrier diodes
Raghunathan, R
Baliga, BJ
IEEE ELECTRON DEVICE LETTERS, 1998, 19 (03) : 71 - 73
[35] P-type 4H and 6H-SiC high-voltage Schottky barrier diodes
North Carolina State Univ, Raleigh, United States
IEEE Electron Device Lett, 3 (71-73):
[36] Characterization of highly doped n- and p-type 6H-SiC piezoresistors
Okojie, RS
Ned, AA
Kurtz, AD
Carr, WN
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) : 785 - 790
[37] Effects of electron irradiation on deep centers in high-purity semi-insulating 6H-SiC
Fang, Z.-Q.
Claflin, B.
Look, D. C.
Farlow, G. C.
JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (04) : 307 - 311
[38] Effects of Electron Irradiation on Deep Centers in High-Purity Semi-Insulating 6H-SiC
Z.-Q. Fang
B. Claflin
D.C. Look
G.C. Farlow
Journal of Electronic Materials, 2007, 36 : 307 - 311
[39] PARAMETERS OF PHOTOSENSITIVITY CENTERS IN HIGH-RESISTIVITY CRYSTALS OF P-TYPE CDTE
LYUBCHENKO, AV
POTYKEVI.IV
BOREIKO, LA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1463 - +
[40] TEMPERATURE BEHAVIOR OF P-TYPE HIGH-RESISTIVITY DIFFUSION LAYERS IN SILICON
ILIEVA, MN
PETROVA, RS
DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1976, 29 (01): : 33 - 35

← 1 2 3 4 5 →