A high di/dt 4H-SiC thyristor with '(sic)-shaped' n-base

被引：1
|
作者：
Liu, Qing [1 ]
Pu, Hongbin [1 ]
Wang, Xi [1 ]
Li, Jiaqi [1 ]
机构：
[1] Xian Univ Technol, Inst Automat & Informat Engn, Xian, Shaanxi, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 04期
基金：
中国国家自然科学基金;
关键词：
4H-SiC; thyristor; turn-on; turn-on di/dt;
D O I：
10.1088/1361-6641/ab0235
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high di/dt 4H-SiC thyristor with (sic)-shaped' n-base is proposed and investigated by simulation. Unlike the conventional SiC thyristors, the proposed SiC thyristor features a lightly-highly-lightly doped ('(sic)-shaped') n-base. By modulating the concentration difference of the top p(+)-n emitter junction its injection efficiency increases. An extra electric field is induced by the existence of an abrupt high-low junction in n-base to force the transit of holes and therefore reduce the recombination. As a result, the turn-on time and turn-on di/dt of the new SiC thyristor are 145 ns and 948 A/cm(2)/mu s, respectively, which are reduced by approximately 72% and increased by approximately 400% compared to conventional SiC thyristors (turn-on time is 514 ns and di/dt is 188 A/cm(2)/mu s).
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页数：8
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