Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures

被引：0

作者：

Jin, Dong-Dong ^{[1
,2
,3
]}

Wang, Lian-shan ^{[1
,2
]}

Yang, Shao-Yan ^{[1
,2
]}

Zhang, Liu-Wan ^{[3
]}

Li, Hui-jie ^{[1
,2
]}

Zhang, Heng ^{[1
,2
]}

Wang, Jian-xia ^{[1
,2
]}

Xiang, Ruo-fei ^{[1
,2
]}

Wei, Hong-yuan ^{[1
,2
]}

Jiao, Chun-mei ^{[1
,2
]}

Liu, Xiang-Lin ^{[1
,2
]}

Zhu, Qin-Sheng ^{[1
,2
]}

Wang, Zhan-Guo ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China

[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 04期

基金：

美国国家科学基金会;

关键词：

THREADING DISLOCATIONS; LASER-DIODES; RELAXATION; FILMS;

D O I：

10.1063/1.4862803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, a theory is developed to study the anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures. The inclined misfit dislocation, which differs from the well-known vertical threading dislocation, has a remarkable tilt angle from the vertical. The predicted electron mobility shows a remarkable anisotropy. It has a maximum mobility value along the direction perpendicular to the projection of the inclined dislocation line, and a minimum mobility value along the direction parallel to the projection. The degree of the anisotropic scattering effect will be even greater with the increase of the tilt angle. (C) 2014 AIP Publishing LLC.

引用

页数：4

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