Investigation of a step-doped-channel negative-differential-resistance transistor

被引：0
|
作者：
Laih, LW
Cheng, SY
Lin, KW
Lin, PH
Chen, JY
Wang, SC
Liu, WC
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 5A期
关键词：
step-doped-channel (SDC); negative-differential resistance (NDR); real space transfer (RST); peak-to-valley current ratio (PVCR);
D O I：
10.1143/JJAP.36.2617
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An interesting AlGaAs/InGaAs/GaAs step-doped channel negative-differential-resistance transistor (SDCNDRT) has been fabricated. The SDCNDRT is based on a previously reported step-doped-channel field-effect transistor, (SDCFET). The N-shaped negative-differential resistance (NDR) are three-terminal-controlled NDR phenomena. We believe that the NDR phenomena can be attributed to the real space transfer (RST). A maximum drain current and peak-to-valley current ratio (PVCR) of 59 mA and 6.6 are obtained, respectively. The high drain current and PVCR indicate the potential of the SDCFET for practical circuit applications.
引用
收藏
页码：2617 / 2620
页数：4
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