Investigation of a step-doped-channel negative-differential-resistance transistor

被引：0
|
作者：
Laih, LW
Cheng, SY
Lin, KW
Lin, PH
Chen, JY
Wang, SC
Liu, WC
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 5A期
关键词：
step-doped-channel (SDC); negative-differential resistance (NDR); real space transfer (RST); peak-to-valley current ratio (PVCR);
D O I：
10.1143/JJAP.36.2617
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An interesting AlGaAs/InGaAs/GaAs step-doped channel negative-differential-resistance transistor (SDCNDRT) has been fabricated. The SDCNDRT is based on a previously reported step-doped-channel field-effect transistor, (SDCFET). The N-shaped negative-differential resistance (NDR) are three-terminal-controlled NDR phenomena. We believe that the NDR phenomena can be attributed to the real space transfer (RST). A maximum drain current and peak-to-valley current ratio (PVCR) of 59 mA and 6.6 are obtained, respectively. The high drain current and PVCR indicate the potential of the SDCFET for practical circuit applications.
引用
收藏
页码：2617 / 2620
页数：4
相关论文
共 50 条
  • [41] Analysis of Terahertz Oscillator Using Negative Differential Resistance Dual-Channel Transistor and Integrated Antenna
    Furuya, Katsumi
    Numakami, Osamu
    Yagi, Nozomi
    Hori, Souichirou
    Sugaya, Takeyoshi
    Komori, Kazuhiro
    Mori, Masahiko
    Okano, Yoshinobu
    Muguruma, Hitoshi
    Asada, Masahiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
  • [42] Negative differential resistance in BN co-doped coaxial carbon nanotube field effect transistor
    Shah, Khurshed A.
    Parvaiz, M. Shunaid
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 100 : 375 - 380
  • [43] Photosensitive silicon bipolar negative-differential-resistance device with controlled I-U characteristic
    I. A. Kashtankin
    N. T. Gurin
    Technical Physics Letters, 2005, 31 : 558 - 559
  • [44] High-Power Schottky Diodes with a Negative-Differential-Resistance Portion in the I–V Characteristic
    A. G. Tandoev
    T. T. Mnatsakanov
    S. N. Yurkov
    Semiconductors, 2021, 55 : 92 - 99
  • [45] NEW NEGATIVE DIFFERENTIAL RESISTANCE EFFECTS IN THE NEGATIVE-RESISTANCE FIELD-EFFECT TRANSISTOR
    KASTALSKY, A
    MILSHTEIN, M
    SHANTHARAMA, LG
    HARBISON, J
    FLOREZ, L
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) : 2186 - 2188
  • [46] Photosensitive silicon bipolar negative-differential-resistance device with controlled I-U characteristic
    Kashtankin, IA
    Gurin, NT
    TECHNICAL PHYSICS LETTERS, 2005, 31 (07) : 558 - 559
  • [47] Single SiC/Si heterostructure negative-differential-resistance diode for resistive-fuse applications
    Wu, KH
    Fang, YK
    Ho, JJ
    Chen, TJ
    Hwang, JD
    ELECTRONICS LETTERS, 1997, 33 (21) : 1824 - 1825
  • [48] COMPLEMENTARY 2-TRANSISTOR CIRCUITS AND NEGATIVE DIFFERENTIAL RESISTANCE
    TRAJKOVIC, L
    WILLSON, AN
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1990, 37 (10): : 1258 - 1266
  • [49] A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance
    Fuchsberger, Andreas
    Wind, Lukas
    Nazzari, Daniele
    Dobler, Alexandra
    Aberl, Johannes
    Navarrete, Enrique Prado
    Brehm, Moritz
    Vogl, Lilian
    Schweizer, Peter
    Lellig, Sebastian
    Maeder, Xavier
    Sistani, Masiar
    Weber, Walter M.
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2024, 12 : 541 - 547
  • [50] Superlatticed negative differential-resistance heterojunction bipolar transistor
    Cheng, SY
    Tsai, JH
    Lin, PH
    Liu, WC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04): : 1477 - 1481
12345