Design and Analysis of an Efficient High Holding Voltage SCR for ESD Protection

被引：0
|
作者：
Zhou, Zijie [1 ]
Jin, Xiangliang [1 ]
机构：
[1] Hunan Engn Lab Microelect Optoelect & Syst Chip, Xiangtan, Peoples R China
来源：
2017 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM (EDAPS) | 2017年
基金：
中国国家自然科学基金;
关键词：
ESD; SCR; 3D simulation; Holding Voltage; CIRCUITS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon-Controlled Rectifier (SCR) is well known for its good robustness, but its deep Snapback makes it have a low holding voltage, it will bring a latch-up issue. An improving silicon-controlled rectifier (DSCR) device with higher holding voltage and smaller area is proposed and fabricated in a 0.5 pm HV CDMOS process. The 3D simulation results show that the DSCR has same working mechanism with SCR, and enlarging the D1 and D2 is effective to increase DSCR's holding voltage. TLP test results show that enlarging D1 and D2 to 8 pm makes the DSCR's holding voltage from 2.4 V to 7.95 V without increasing layout area.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] High-Voltage ESD Protection Device With Fast Transient Reaction and High Holding Voltage
    Lai, Da-Wei
    de Raad, Gijs
    Sque, Stephen
    Peters, Wim
    Smedes, Theo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (07) : 2884 - 2891
  • [32] The novel SCR-based ESD protection with low triggering and high holding voltages
    Kang, Myounggon
    Song, Ki-Whan
    Park, Byung-Gook
    Shin, Hyungcheol
    MICROELECTRONICS JOURNAL, 2011, 42 (06) : 837 - 839
  • [33] Investigation and Suppression of Holding Voltage Deterioration in Multifinger SCR for Robust High-Voltage ESD Engineering
    Du, Feibo
    Jiang, Guijun
    Huang, Meichen
    Zou, Kepeng
    Hou, Fei
    Song, Wenqiang
    Liu, Jizhi
    Xiong, Xuanlin
    Hou, Lingli
    Liu, Zhiwei
    Liou, Juin J.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (12) : 6338 - 6343
  • [34] Design of a Gate Diode Triggered SCR for Dual-Direction High-Voltage ESD Protection
    Liang, Hailian
    Xu, Qiang
    Zhu, Ling
    Gu, Xiaofeng
    Sun, Guipeng
    Lin, Fen
    Zhang, Sen
    Xiao, Kui
    Yu, Zhiguo
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (02) : 163 - 166
  • [35] A Design of BJT-based ESD Protection Device combining SCR for High Voltage Power Clamps
    Jung, Jin-Woo
    Koo, Yong-Seo
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, 14 (03) : 339 - 344
  • [36] TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection
    Zunarelli, Laura
    Balestra, Luigi
    Reggiani, Susanna
    Sankaralingam, Raj
    Dissegna, Mariano
    Boselli, Gianluca
    2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS, 2023,
  • [37] An unassisted, low trigger-, and high holding-voltage SCR (uSCR) for on-chip ESD-protection applications
    Lou, Lifang
    Liou, Juin J.
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) : 1120 - 1122
  • [38] Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection
    Zhuo Wang
    Zhao Qi
    Longfei Liang
    Ming Qiao
    Zhaoji Li
    Bo Zhang
    Nanoscale Research Letters, 2019, 14
  • [39] High holding voltage SCRs with segmented layout for high-robust ESD protection
    Huang, Xiaozong
    Liu, Zhiwei
    Liu, Fan
    Liu, Jizhi
    Song, Wenqiang
    ELECTRONICS LETTERS, 2017, 53 (18) : 1274 - 1275
  • [40] An improved LDMOS-SCR design for high-voltage ESD
    Bao, Xingtao
    Jin, Xiangliang
    2022 INTERNATIONAL EOS/ESD SYMPOSIUM ON DESIGN AND SYSTEM (IEDS), 2022,
12345