TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection

被引：0
|
作者：
Zunarelli, Laura [1 ,2 ,3 ]
Balestra, Luigi [1 ,2 ,3 ]
Reggiani, Susanna [1 ,2 ,3 ]
Sankaralingam, Raj [4 ]
Dissegna, Mariano [4 ]
Boselli, Gianluca [4 ]
机构：
[1] ARCES, Viale Risorgimento 2, I-40136 Bologna, Italy
[2] Dept Elect Engn Guglielmo Marconi, Viale Risorgimento 2, I-40136 Bologna, Italy
[3] Univ Bologna, Bologna, Italy
[4] Texas Instruments Inc, 12500 TI Blvd, Dallas, TX 75243 USA
来源：
2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS | 2023年
关键词：
ESD; SCR; high holding; TCAD; traps; LIFETIME CONTROL;
D O I：
10.1109/IRPS48203.2023.10118271
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper investigates a method to increase the holding voltage in a conventional Silicon Controlled Rectifier (SCR) for ESD power clamping. Specifically, a SCR-LDMOS device with 150 V trigger voltage and 9 V holding voltage is investigated assuming the application of high-energy electron irradiation. Based on previous experimental and TCAD investigations, the most relevant kind of defects is accounted for at different irradiation levels clearly showing an increase of the holding voltage up to 16 V without any other significant change in the TLP characteristics. The role of trapped charges in the holding regime has been addressed up to the thermal runaway through extensive numerical investigations.
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页数：6
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