Development of single quantum Hall devices for the resistance standard in NIM

被引：0
|
作者：
Wang, Xueshen [1 ]
Zhong, Qing [1 ]
Li, Jinjin [1 ]
Lu, Yunfeng [1 ]
Zhong, Yuan [1 ]
Zhao, Mengke [1 ]
Li, Zhengkun [1 ]
Li, Zhun [1 ]
机构：
[1] Natl Inst Metrol NIM, Beijing, Peoples R China
来源：
2016 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2016) | 2016年
关键词：
Quantum Hall effect; heterojunction; CCC; measurement; FABRICATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we report the progress on single quantum Hall devices for the resistance standards in NIM. We use the NIM-made device and the LEP-made device distributed to NIM by BIPM to calibrate a Tinsley 100 Omega transfer resistor using a cryogenic current comparator (CCC) at the filling factor k=2. The deviations of resistance values from the nominal value were -4.4808x10(-6)+/- 3.5x10(-9) by NIM-1 and -4.4987x10(-6)+/- 3.5x10(-9) by BIPM-2 separately. We assume the relative difference 1.8x10(-8) is due to the drift of the 100 Omega transfer resistor. More stable resistor will be used in future experiments.
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页数：2
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