Development of single quantum Hall devices for the resistance standard in NIM

被引：0

作者：

Wang, Xueshen ^{[1
]}

Zhong, Qing ^{[1
]}

Li, Jinjin ^{[1
]}

Lu, Yunfeng ^{[1
]}

Zhong, Yuan ^{[1
]}

Zhao, Mengke ^{[1
]}

Li, Zhengkun ^{[1
]}

Li, Zhun ^{[1
]}

机构：

[1] Natl Inst Metrol NIM, Beijing, Peoples R China

来源：

2016 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2016) | 2016年

关键词：

Quantum Hall effect; heterojunction; CCC; measurement; FABRICATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report the progress on single quantum Hall devices for the resistance standards in NIM. We use the NIM-made device and the LEP-made device distributed to NIM by BIPM to calibrate a Tinsley 100 Omega transfer resistor using a cryogenic current comparator (CCC) at the filling factor k=2. The deviations of resistance values from the nominal value were -4.4808x10(-6)+/- 3.5x10(-9) by NIM-1 and -4.4987x10(-6)+/- 3.5x10(-9) by BIPM-2 separately. We assume the relative difference 1.8x10(-8) is due to the drift of the 100 Omega transfer resistor. More stable resistor will be used in future experiments.

引用

页数：2

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