Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices

被引：17
|
作者：
Wang, JN [1 ]
Sun, BQ
Wang, XR
Wang, HL
机构：
[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 07期
关键词：
semiconductors; tunneling;
D O I：
10.1016/S0038-1098(99)00370-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We investigate the transition from static to dynamic electric field domains (EFDs) in a doped GaAs/AlAs superlattice (SL). We show that a transverse magnetic field and/or the temperature can induce current self-oscillations. This observation can be attributed to the negative differential resistance (NDR) effect. Transverse magnetic field and the temperature can increase the NDR of a doped SL. A large NDR can lead to an unstable EFD in a certain range of d.c. bias. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：371 / 374
页数：4
相关论文
共 50 条
  • [1] Negative differential resistance and current self-oscillation in doped GaAs/AlAs superlattices
    Wang, JN
    Li, CY
    Wang, XR
    Sun, BQ
    Wang, YQ
    Ge, WK
    Jiang, DS
    Zeng, YP
    [J]. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 837 - 838
  • [2] NEGATIVE DIFFERENTIAL CONDUCTANCE IN GAAS/ALAS SUPERLATTICES
    SIBILLE, A
    PALMIER, JF
    MOLLOT, F
    WANG, H
    ESNAULT, JC
    [J]. PHYSICAL REVIEW B, 1989, 39 (09): : 6272 - 6275
  • [3] Current self-oscillation induced by a transverse magnetic field in a doped GaAs/AlAs superlattice
    Sun, BQ
    Wang, JN
    Ge, WK
    Wang, YQ
    Jiang, DS
    Zhu, HJ
    Wang, HL
    Deng, YM
    Feng, SL
    [J]. PHYSICAL REVIEW B, 1999, 60 (12) : 8866 - 8870
  • [4] Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice
    Wang, XR
    Wang, JN
    Sun, BQ
    Jiang, DS
    [J]. PHYSICAL REVIEW B, 2000, 61 (11) : 7261 - 7264
  • [5] NEGATIVE DIFFERENTIAL PERPENDICULAR VELOCITY IN GAAS/ALAS SUPERLATTICES
    SIBILLE, A
    PALMIER, JF
    WANG, H
    ESNAULT, JC
    [J]. SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1461 - 1465
  • [6] DC AND MICROWAVE NEGATIVE DIFFERENTIAL CONDUCTANCE IN GAAS/ALAS SUPERLATTICES
    SIBILLE, A
    PALMIER, JF
    WANG, H
    ESNAULT, JC
    MOLLOT, F
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (03) : 256 - 258
  • [7] Spikes in the current self-oscillations of doped GaAs/AlAs superlattices
    Kantelhardt, JW
    Grahn, HT
    Ploog, KH
    Moscoso, M
    Perales, A
    Bonilla, LL
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 204 (01): : 500 - 503
  • [8] Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices
    Li, CY
    Sun, BQ
    Jiang, DS
    Wang, JN
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (04) : 239 - 242
  • [9] OBSERVATION OF ESAKI-TSU NEGATIVE DIFFERENTIAL VELOCITY IN GAAS/ALAS SUPERLATTICES
    SIBILLE, A
    PALMIER, JF
    WANG, H
    MOLLOT, F
    [J]. PHYSICAL REVIEW LETTERS, 1990, 64 (01) : 52 - 55
  • [10] HYPERABRUPT CURRENT SWITCHING IN GAAS/ALAS SUPERLATTICES
    GORONKIN, H
    TEHRANI, S
    SHEN, J
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1991, 10 (03) : 315 - 318
12345