Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices

被引：17
|
作者：
Wang, JN [1 ]
Sun, BQ
Wang, XR
Wang, HL
机构：
[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 07期
关键词：
semiconductors; tunneling;
D O I：
10.1016/S0038-1098(99)00370-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We investigate the transition from static to dynamic electric field domains (EFDs) in a doped GaAs/AlAs superlattice (SL). We show that a transverse magnetic field and/or the temperature can induce current self-oscillations. This observation can be attributed to the negative differential resistance (NDR) effect. Transverse magnetic field and the temperature can increase the NDR of a doped SL. A large NDR can lead to an unstable EFD in a certain range of d.c. bias. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：371 / 374
页数：4
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