HYPERABRUPT CURRENT SWITCHING IN GAAS/ALAS SUPERLATTICES

被引:1
|
作者
GORONKIN, H
TEHRANI, S
SHEN, J
机构
[1] Motorola, Phoenix Corporate Research Laboratories, Tempe, AZ 85284, 2100 E Elliot Rd
关键词
D O I
10.1016/0749-6036(91)90334-N
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have observed extremely large hyperabrupt changes spanning many orders of magnitude in superlattice current at temperatures ranging from 55-350K. Current is in the 10pA range before threshold and rises abruptly to over 10 mA at 55K, a change of nine orders of magnitude for a voltage change of about 1.0mV. This instantaneous current change is far larger than space charge limited current increases previously reported for bulk semiconductors. A native defect located in the superlattice barriers controls the magnitude of prethreshold current. This defect has a strong temperature and electric field dependent tunneling emission to the superlattice quantum well ground states. © 1991.
引用
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页码:315 / 318
页数:4
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