INDIRECT GAAS/ALAS SUPERLATTICES

被引:0
|
作者
MEYNADIER, MH
机构
关键词
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:293 / 304
页数:12
相关论文
共 50 条
  • [1] DIRECT AND INDIRECT TRANSITIONS IN (GAAS)M (ALAS)5 SUPERLATTICES
    FUJIMOTO, H
    HAMAGUCHI, C
    NAKAZAWA, T
    IMANISHI, K
    TANIGUCHI, K
    SASA, S
    [J]. SURFACE SCIENCE, 1990, 228 (1-3) : 206 - 209
  • [2] INDIRECT DIRECT SWITCHING OF GAAS/ALAS SHORT-PERIOD SUPERLATTICES
    MEYNADIER, MH
    NAHORY, RE
    WORLOCK, JM
    TAMARGO, MC
    DEMIGUEL, JL
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S5 - S5
  • [3] PHONONS IN GAAS/ALAS SUPERLATTICES
    TSUCHIYA, T
    AKERA, H
    ANDO, T
    [J]. PHYSICAL REVIEW B, 1989, 39 (09): : 6025 - 6033
  • [4] PHYSICS OF GAAS/ALAS SUPERLATTICES
    PLANEL, R
    MOLLOT, F
    [J]. ACTA PHYSICA POLONICA A, 1991, 79 (01) : 71 - 82
  • [5] STABILITY OF GAAS/ALAS SUPERLATTICES
    CHRISTENSEN, NE
    [J]. SOLID STATE COMMUNICATIONS, 1988, 68 (10) : 959 - 962
  • [6] ANNEALING OF GAAS/ALAS SUPERLATTICES
    BABAALI, N
    HARRISON, I
    TUCK, B
    HO, HP
    HENINI, M
    HUGHES, OH
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1990, 1 (03) : 133 - 136
  • [7] THIN [001] AND [110] GAAS/ALAS SUPERLATTICES - DISTINCTION BETWEEN DIRECT AND INDIRECT SEMICONDUCTORS
    EPPENGA, R
    SCHUURMANS, MFH
    [J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3541 - 3544
  • [8] X-Gamma indirect intersubband transitions in type II GaAs/AlAs superlattices
    Fenigstein, A
    Finkman, E
    Bahir, G
    Schacham, SE
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (12) : 1758 - 1760
  • [9] Thermal conductivity of GaAs/AlAs superlattices
    Capinski, WS
    Cardona, M
    Katzer, DS
    Maris, HJ
    Ploog, K
    Ruf, T
    [J]. PHYSICA B, 1999, 263 : 530 - 532
  • [10] ELECTROLUMINESCENCE OF ALAS/GAAS DISORDERED SUPERLATTICES
    KASU, M
    YAMAMOTO, T
    NODA, S
    SASAKI, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (09): : L1588 - L1590