ELECTROLUMINESCENCE OF ALAS/GAAS DISORDERED SUPERLATTICES

被引：15
|
作者：
KASU, M
YAMAMOTO, T
NODA, S
SASAKI, A
机构：
[1] Department of Electrical Engineering, Kyoto University, Kyoto
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 09期
关键词：
AIAs/GaAs superlattice; Disordered superlattice; Electroluminescence; Molecular beam epitaxy; Pin diode;
D O I：
10.1143/JJAP.29.L1588
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The double hetero (DH)-structure pin diode in which an undoped AlAs/GaAs disordered superlattice is used for the active layer is fabricated, and electroluminescence (EL) from the diode is measured at room temperature. The DH-structure pin diode whose active layer is either Al0.5Ga0.5As bulk alloy or (AlAs)2(GaAs)2 ordered superlattice is also fabricated for the comparison of EL. The EL intensity from the disordered superlattice is 2.5 and 10 times stronger than those from the last two diodes, respectively, and the EL peak energy of 1.88 eV from the disordered superlattice is lower than those from the other two diodes, i.e., the red shift. © 1990 The Japan Society of Applied Physics.
引用
收藏
页码：L1588 / L1590
页数：3
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