Low Frequency Noise in Polycrystalline p-β-FeSi2/Ge Heterojunction Solar Cells

被引：0
|
作者：
Bag, A. [1 ]
Mukherjee, C. [1 ]
Mallik, S. [1 ]
Maiti, C. K. [1 ]
机构：
[1] Indian Inst Technol, VLSI Engn Lab, Dept Elect & ECE, Kharagpur 721302, W Bengal, India
来源：
PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) | 2013年
关键词：
1/F NOISE; RELIABILITY ESTIMATION; BURST NOISE; 1-F NOISE; DEVICES; DIODES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-frequency noise characterization of ITO/p-beta-FeSi2(Al)/Alin-Ge(100) heteroj unction solar cells is reported. 1/f noise and stress-induced degradation studies are used for the reliability analyses of solar cells. The nature of the burst noise generated from the defects in the p-n junction space-charge region of the solar cell and their bias dependence have been studied in detail. Use of low-frequency noise is shown to be a non-destructive reliability characterization tool for solar cells.
引用
收藏
页码：377 / 380
页数：4
相关论文
共 50 条
  • [1] Polycrystalline p-β-FeSi2(Al) on n-Si(100): Heterojunction Thin-Film Solar Cells
    Bag, A.
    Mallik, S.
    Mahata, C.
    Maiti, C. K.
    2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE), 2012, : 285 - 287
  • [2] Low-frequency noise in polycrystalline semiconducting FeSi2 thin films
    Tassis, D.H.
    Dimitriadis, C.A.
    Brini, J.
    Kamarinos, G.
    Birbas, A.
    Journal of Applied Physics, 1999, 85 (8 I): : 4091 - 4095
  • [3] Low-frequency noise in polycrystalline semiconducting FeSi2 thin films
    Tassis, DH
    Dimitriadis, CA
    Brini, J
    Kamarinos, G
    Birbas, A
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) : 4091 - 4095
  • [4] Effects of band offset and doping concentration on the photovoltaic properties of n-β-FeSi2/p-Si and p-β-FeSi2/n-Si heterojunction solar cells
    Xu, Jiaxiong
    Yang, Yuanzheng
    SURFACE AND INTERFACE ANALYSIS, 2014, 46 (04) : 248 - 253
  • [5] Photovoltaic characteristics of p-β-FeSi2(Al)/n-Si(100) heterojunction solar cells and the effects of interfacial engineering
    Dalapati, G. K.
    Liew, S. L.
    Wong, A. S. W.
    Chai, Y.
    Chiam, S. Y.
    Chi, D. Z.
    APPLIED PHYSICS LETTERS, 2011, 98 (01)
  • [6] Thin Film Polycrystalline β-FeSi2/Si Heterojunction Solar Cells via Al Incorporation and Rapid Thermal Processing
    Liew, S. L.
    Chai, Y.
    Tan, H. R.
    Tan, J. P. Y.
    Seng, D. H. L.
    Lai, D. M. Y.
    Chua, C. T.
    Chi, D. Z.
    INTERNATIONAL CONFERENCE ON MATERIALS FOR ADVANCED TECHNOLOGIES 2011, SYMPOSIUM O, 2012, 15 : 305 - 311
  • [7] Low frequency noise in β-FeSi2/n-Si heterojunctions
    Tassis, DH
    Dimitriadis, CA
    Brini, J
    Kamarinos, G
    Angelakeris, M
    Flevaris, N
    APPLIED PHYSICS LETTERS, 1998, 72 (06) : 713 - 715
  • [8] n-β-FeSi2/p-Si heterojunction solar cells simulation by AFORS-HET
    Xu, W. Y.
    Chen, F. X.
    Wang, J. F.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2014, 16 (3-4): : 494 - 498
  • [9] Simulation of n-β-FeSi2/p-Si heterojunction solar cells based on AFORS-HET
    Zou, Xin-Yao
    MODERN PHYSICS LETTERS B, 2017, 31 (19-21):
  • [10] Influence of annealing temperature and β-FeSi2layer thickness on the n-type β-FeSi2/p-type Si heterojunction solar cells
    Yu, Cao
    Hou, Guo-Fu
    Liu, Fang
    Sun, Jian
    Zhao, Ying
    Geng, Xin-Hua
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2009, 38 (03): : 662 - 665
12345