Low Frequency Noise in Polycrystalline p-β-FeSi2/Ge Heterojunction Solar Cells

被引：0

作者：

Bag, A. ^{[1
]}

Mukherjee, C. ^{[1
]}

Mallik, S. ^{[1
]}

Maiti, C. K. ^{[1
]}

机构：

[1] Indian Inst Technol, VLSI Engn Lab, Dept Elect & ECE, Kharagpur 721302, W Bengal, India

来源：

PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) | 2013年

关键词：

1/F NOISE; RELIABILITY ESTIMATION; BURST NOISE; 1-F NOISE; DEVICES; DIODES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-frequency noise characterization of ITO/p-beta-FeSi2(Al)/Alin-Ge(100) heteroj unction solar cells is reported. 1/f noise and stress-induced degradation studies are used for the reliability analyses of solar cells. The nature of the burst noise generated from the defects in the p-n junction space-charge region of the solar cell and their bias dependence have been studied in detail. Use of low-frequency noise is shown to be a non-destructive reliability characterization tool for solar cells.

引用

页码：377 / 380

页数：4

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