Low Frequency Noise in Polycrystalline p-β-FeSi2/Ge Heterojunction Solar Cells

被引：0
|
作者：
Bag, A. [1 ]
Mukherjee, C. [1 ]
Mallik, S. [1 ]
Maiti, C. K. [1 ]
机构：
[1] Indian Inst Technol, VLSI Engn Lab, Dept Elect & ECE, Kharagpur 721302, W Bengal, India
来源：
PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) | 2013年
关键词：
1/F NOISE; RELIABILITY ESTIMATION; BURST NOISE; 1-F NOISE; DEVICES; DIODES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-frequency noise characterization of ITO/p-beta-FeSi2(Al)/Alin-Ge(100) heteroj unction solar cells is reported. 1/f noise and stress-induced degradation studies are used for the reliability analyses of solar cells. The nature of the burst noise generated from the defects in the p-n junction space-charge region of the solar cell and their bias dependence have been studied in detail. Use of low-frequency noise is shown to be a non-destructive reliability characterization tool for solar cells.
引用
收藏
页码：377 / 380
页数：4
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