Simulation of n-β-FeSi2/p-Si heterojunction solar cells based on AFORS-HET

被引：3
|
作者：
Zou, Xin-Yao [1 ]
机构：
[1] Guangdong AIB Polytech Coll, Dept Mech & Elect, Guangzhou 510507, Guangdong, Peoples R China
来源：
MODERN PHYSICS LETTERS B | 2017年 / 31卷 / 19-21期
关键词：
beta-FeSi2; emitter; interface states density; conversion efficiency;
D O I：
10.1142/S0217984917400267
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Semiconducting thin beta-FeSi2 film has been recognized as a novel solar cell material due to its high absorption coefficient. In this study, the effects of emmiter on the photovoltaic properties of n-beta-FeSi2/p-Si were analyzed using AFORS_HET program. The simulation results show that the thickness of emitter affects the conversion efficiency of solar cell, and the short-current density decreases sharply with increasing thickness of emitter. Interface state is another key factor influencingt he conversion efficiency of solar cell, which degrades solar cell performance. In order to obtain high efficiency battery, interface state density should be less than 10(11) cm(-2) eV
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页数：5
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