Simulation of n-β-FeSi2/p-Si heterojunction solar cells based on AFORS-HET

被引：3
|
作者：
Zou, Xin-Yao [1 ]
机构：
[1] Guangdong AIB Polytech Coll, Dept Mech & Elect, Guangzhou 510507, Guangdong, Peoples R China
来源：
MODERN PHYSICS LETTERS B | 2017年 / 31卷 / 19-21期
关键词：
beta-FeSi2; emitter; interface states density; conversion efficiency;
D O I：
10.1142/S0217984917400267
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Semiconducting thin beta-FeSi2 film has been recognized as a novel solar cell material due to its high absorption coefficient. In this study, the effects of emmiter on the photovoltaic properties of n-beta-FeSi2/p-Si were analyzed using AFORS_HET program. The simulation results show that the thickness of emitter affects the conversion efficiency of solar cell, and the short-current density decreases sharply with increasing thickness of emitter. Interface state is another key factor influencingt he conversion efficiency of solar cell, which degrades solar cell performance. In order to obtain high efficiency battery, interface state density should be less than 10(11) cm(-2) eV
引用
收藏
页数：5
相关论文
共 50 条
  • [41] Improvement in Photovoltaic Performance of Thin Film β-FeSi2/Si Heterojunction Solar Cells with Al Interlayer
    Liew, S. L.
    Chai, Y.
    Tan, H. R.
    Hui, H. K.
    Wong, A. S. W.
    Dalapati, G. K.
    Chi, D. Z.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2012, 159 (01) : H52 - H56
  • [42] a-Si(p)/c-Si(n)异质结太阳电池的AFORS-HET模拟优化
    卢超
    丁建宁
    程广贵
    郭立强
    林爱国
    电源技术, 2013, 37 (05) : 770 - 773
  • [43] AFORS-HET simulation for investigating the performance of ZnO/n-CdS/p-CdTe/Ag solar cell depending on CdTe acceptor concentration and temperature
    Metin, Bengul
    Kavasoglu, Nese
    Kavasoglu, Sertap
    PHYSICA B-CONDENSED MATTER, 2023, 649
  • [44] Impact of Al Passivation and Cosputter on the Structural Property of β-FeSi2 for Al-Doped β-FeSi2/n-Si(100) Based Solar Cells Application
    Dalapati, Goutam Kumar
    Kumar, Avishek
    Tan, Cheng Cheh
    Liew, Siao Li
    Sonar, Prashant
    Seng, Hwee Leng
    Hui, Hui Kim
    Tripathy, Sudhiranjan
    Chi, Dongzhi
    ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (12) : 5455 - 5460
  • [45] Low-temperature deposition of high quality β-FeSi2 films by co-sputtering of Fe and Si for β-FeSi2/Si heterojunction solar cell
    Hou, Guofu
    Yu, Cao
    Liu, Fang
    Sun, Jian
    Geng, Xinhua
    Zhao, Ying
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4): : 1081 - 1084
  • [46] Effects of emitter parameters and recombination mechanisms on the performance of β-FeSi2/c-Si heterojunction solar cells
    Yuan, Jiren
    Shen, Honglie
    Lu, Linfeng
    Huang, Haibin
    He, Xiancong
    PHYSICA B-CONDENSED MATTER, 2010, 405 (21) : 4565 - 4569
  • [47] Influence of surface recombination and interface states on the performance of β-FeSi2/c-Si heterojunction solar cells
    Yuan, Jiren
    Shen, Honglie
    Lu, Linfeng
    PHYSICA B-CONDENSED MATTER, 2011, 406 (09) : 1733 - 1737
  • [48] Preparation and numerical simulation of cds/p-si heterojunction solar cell
    Zhao, Yingwen
    Wu, Weiliang
    Gao, Bing
    Cai, Lun
    Duan, Chunyan
    Shen, Hui
    Taiyangneng Xuebao/Acta Energiae Solaris Sinica, 2019, 40 (09): : 2579 - 2585
  • [49] Device operation of P-ion-implanted n-BaSi2/p-Si heterojunction solar cells
    Aonuki, Sho
    Yamashita, Yudai
    Limodio, Gianluca
    Narita, Shunsuke
    Takayanagi, Kaori
    Iwai, Ai
    Toko, Kaoru
    Zeman, Miro
    Isabella, Olindo
    Suemasu, Takashi
    PROGRESS IN PHOTOVOLTAICS, 2023, 31 (12): : 1360 - 1368
  • [50] Improved power conversion efficiency in n-MoS2/AlN/p-Si (SIS) heterojunction based solar cells
    Kumar, Krishan
    Kumar, Anuj
    Kaur, Davinder
    MATERIALS LETTERS, 2020, 277 (277)
12345