A Novel Design for Low Power Re-RAM Based Non-Volatile Flip Flop Using Content Addressable Memory

被引：0
|
作者：
Hemavathy, B. [1 ]
Meenakshi, V. [2 ]
机构：
[1] Sona Coll Technol Autonomous, VLSI Design, Salem, India
[2] Sona Coll Technol Autonomous, Salem, India
来源：
2017 THIRD INTERNATIONAL CONFERENCE ON SCIENCE TECHNOLOGY ENGINEERING & MANAGEMENT (ICONSTEM) | 2017年
关键词：
Resistive random access memory; nonvolatile; NVFF; SRAM; nvSRAM; nvCAM;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
Low power consumption is the major issue in electronic systems and memories are the major contributors of the power consumption. Resistive Memories (ReRAMs) has fast access time, ultra-low stand by power and high reliability. Memristor based NV logics like resistive SRAM and resistive CAM memories were proposed and focused on the behavior of resistive property with memory operation. Complementary metal oxide semiconductor technology is used to design nvff with memristor. The resistive CAM has less power and timing compared to resistive SRAM. The total power, delay and area were analyzed and compared for both ReSRAM and ReCAM.
引用
收藏
页码：879 / 883
页数：5
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