High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

被引：4

作者：

Zheng Liu ^{[1
]}

Zhang Feng ^{[1
]}

Liu Sheng-Bei ^{[1
]}

Dong Lin ^{[1
]}

Liu Xing-Fang ^{[1
]}

Fan Zhong-Chao ^{[2
]}

Liu Bin ^{[1
]}

Yan Guo-Guo ^{[1
]}

Wang Lei ^{[1
]}

Zhao Wan-Shun ^{[1
]}

Sun Guo-Sheng ^{[1
]}

He Zhi ^{[1
]}

Yang Fu-Hua ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS B | 2013年 / 22卷 / 09期

基金：

中国国家自然科学基金;

关键词：

4H-SiC; junction barrier Schottky (JBS) diode; high-temperature annealed resistive termination xtension (HARTE); BREAKDOWN VOLTAGE; EDGE TERMINATION; POWER DEVICES; DESIGN;

D O I：

10.1088/1674-1056/22/9/097302

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 m Omega.cm(2) with a total active area of 2.46 x 10(-3) cm(2). Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250 degrees C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 x 10(-5) A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.

引用

页数：6

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