Barrier height tuning in Ti/4H-SiC Schottky diodes

被引：13
|
作者：
Bellocchi, G. [1 ]
Vivona, M. [2 ]
Bongiorno, C. [2 ]
Badala, P. [1 ]
Bassi, A. [1 ]
Rascuna, S. [1 ]
Roccaforte, F. [2 ]
机构：
[1] STMicroelectronics, Str Primosole 50, I-95121 Catania, Italy
[2] CNR IMM, Str 8,5, Catania, Italy
来源：
SOLID-STATE ELECTRONICS | 2021年 / 186卷
关键词：
SiC diode; Schottky barrier; Diffusion; Power device; TRANSPORT; CONTACTS;
D O I：
10.1016/j.sse.2021.108042
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we investigated the effects of annealing temperature and metal thickness on the Schottky barrier height in state-of-the-art Ti/4H-SiC rectifiers. By varying these two parameters, a controlled lowering of the Schottky barrier height has been obtained, thus giving the possibility to improve the efficiency of device in terms of power consumption.
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收藏
页数：5
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