600 v 100 a 4H-SiC junction barrier Schottky diode with guard rings termination

被引：9
|
作者：
Yamarnoto, Tsuyoshi [1 ]
Endo, Takeshi [1 ]
Kato, Nobuyuki [1 ]
Nakamura, Hiroki [1 ]
Sakakibara, Toshio [1 ]
机构：
[1] DENSO CORP, Res Labs, Nisshin, Aichi, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷
关键词：
4H-SiC; JBS; Guard ring; P-type dopant; 5mm size; switching characteristic;
D O I：
10.4028/www.scientific.net/MSF.556-557.857
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
4H-SiC SBDs have been commercialized for power application devices. However, the maximum current of these SBDs is 20A. In this work, we designed a JBS (junction barrier Schottky) diode structure and the fabrication processes to be optimized. The current and breakdown voltage were over 100 A and 660 V at Ir = 1 mA/cm(2), respectively. The recovery characteristics of the JBS diode are much superior to those of the Si-FRD while it is comparable to those of the commercially available SiC-SBD at elevated temperatures up to 125 degrees C.
引用
收藏
页码：857 / 860
页数：4
相关论文
共 50 条
  • [1] Study of 4H-SiC junction barrier Schottky diode using field guard ring termination
    陈丰平
    张玉明
    吕红亮
    张义门
    黄建华
    [J]. Chinese Physics B, 2010, 19 (09) : 519 - 522
  • [2] Study of 4H-SiC junction barrier Schottky diode using field guard ring termination
    Chen Feng-Ping
    Zhang Yu-Ming
    Lue Hong-Liang
    Zhang Yi-Men
    Huang Jian-Hua
    [J]. CHINESE PHYSICS B, 2010, 19 (09)
  • [3] Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode
    陈丰平
    张玉明
    张义门
    汤晓燕
    王悦湖
    陈文豪
    [J]. Chinese Physics B, 2011, 20 (11) : 446 - 450
  • [4] Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode
    Chen Feng-Ping
    Zhang Yu-Ming
    Zhang Yi-Men
    Tang Xiao-Yan
    Wang Yue-Hu
    Chen Wen-Hao
    [J]. CHINESE PHYSICS B, 2011, 20 (11)
  • [5] Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode
    Chen Fengping
    Zhang Yuming
    Lue Hongliang
    Zhang Yimen
    Guo Hui
    Guo Xin
    [J]. JOURNAL OF SEMICONDUCTORS, 2011, 32 (06)
  • [6] Fabrication of a 600-V/20-A 4H-SiC schottky barrier diode
    Kang, In-Ho
    Kim, Sang-Cheol
    Moon, Jung-Hyeon
    Bahng, Wook
    Kim, Nam-Kyun
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 64 (12) : 1886 - 1891
  • [7] Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode
    陈丰平
    张玉明
    吕红亮
    张义门
    郭辉
    郭鑫
    [J]. Journal of Semiconductors, 2011, (06) : 33 - 35
  • [8] Fabrication of a 600-V/20-A 4H-SiC schottky barrier diode
    In-Ho Kang
    Sang-Cheol Kim
    Jung-Hyeon Moon
    Wook Bahng
    Nam-Kyun Kim
    [J]. Journal of the Korean Physical Society, 2014, 64 : 1886 - 1891
  • [9] Simulation and fabrication of high-voltage 4H-SiC Schottky barrier diode with junction termination extension
    Zhang, Fa-Sheng
    Li, Xin-Ran
    [J]. Hunan Daxue Xuebao/Journal of Hunan University Natural Sciences, 2010, 37 (07): : 47 - 50
  • [10] A 4H-SiC junction barrier Schottky diode with segregated floating trench and super junction
    Wu, Lijuan
    Lei, Bing
    Yang, Hang
    Song, Yue
    Zhang, Yinyan
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2018, 123 : 201 - 209
12345