Reliability issues of AlGaN/GaN heterostructures field-effect transistors

被引：0
|
作者：
Skriniarova, J. [1 ]
Florovic, M. [1 ]
Kovac, J. [1 ]
Donoval, D. [1 ]
Kordos, P. [1 ]
机构：
[1] Univ Technol, Dept Microelect, Bratislava, Slovakia
来源：
ASDAM 2008, CONFERENCE PROCEEDINGS | 2008年
关键词：
D O I：
10.1109/ASDAM.2008.4743329
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reliability of the AlGaN/GaN HFETs was investigated by applying a short-time (70 min) off-state stress: the drain voltage was 50 V and the channel was pinched off. Significant decrease of the drain current at the stressing conditions was observed. Simultaneously, a decrease of the gate currents was found. On the other hand, the transconductance and threshold voltage did not changed with the stressing time. A modification of the Schottky barier during the stress is considered to explain this behaviour. Near-surface defects, created during the AlGaN surface preparation before the gate deposition, were suppressed as a result of performed high-electric-field stress.
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页码：247 / 250
页数：4
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