Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect

被引：28
|
作者：
Chen, Z. [1 ,2 ]
Pei, Y. [1 ]
Newman, S. [1 ]
Brown, D. [1 ]
Chung, R. [2 ]
Keller, S. [1 ]
DenBaars, S. P. [1 ,2 ]
Nakamura, S. [2 ]
Mishra, U. K. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 17期
关键词：
aluminium compounds; field effect transistors; gallium compounds; III-V semiconductors; semiconductor growth; semiconductor heterojunctions; wide band gap semiconductors; GAN;
D O I：
10.1063/1.3129865
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Field-effect transistors (FETs) were grown on both GaN and AlGaN buffers. X-ray reciprocal space mapping and omega-2 theta scans showed that the AlGaN barriers grown on these two buffers had different Al compositions and growth rates, which was attributed to the compositional pulling effect. AlGaN/GaN/AlGaN double heterojunction FETs exhibited lower output conductance and better pinch-off due to the improved electron confinement resulting from the increase in the effective back-side barrier height. Thus, this device is promising for highly scaled transistors. This device also demonstrated a state-of-the-art power added efficiency of 53.5% and an associated power gain of 9.1 dB at a drain bias of 20 V at 30 GHz.
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页数：3
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