Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect

被引：28

作者：

Chen, Z. ^{[1
,2
]}

Pei, Y. ^{[1
]}

Newman, S. ^{[1
]}

Brown, D. ^{[1
]}

Chung, R. ^{[2
]}

Keller, S. ^{[1
]}

DenBaars, S. P. ^{[1
,2
]}

Nakamura, S. ^{[2
]}

Mishra, U. K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 17期

关键词：

aluminium compounds; field effect transistors; gallium compounds; III-V semiconductors; semiconductor growth; semiconductor heterojunctions; wide band gap semiconductors; GAN;

D O I：

10.1063/1.3129865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field-effect transistors (FETs) were grown on both GaN and AlGaN buffers. X-ray reciprocal space mapping and omega-2 theta scans showed that the AlGaN barriers grown on these two buffers had different Al compositions and growth rates, which was attributed to the compositional pulling effect. AlGaN/GaN/AlGaN double heterojunction FETs exhibited lower output conductance and better pinch-off due to the improved electron confinement resulting from the increase in the effective back-side barrier height. Thus, this device is promising for highly scaled transistors. This device also demonstrated a state-of-the-art power added efficiency of 53.5% and an associated power gain of 9.1 dB at a drain bias of 20 V at 30 GHz.

引用

页数：3

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