Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates

被引：29

作者：

Dou, Wei ^{[1
,2
]}

Zhu, Liqiang ^{[1
,2
]}

Jiang, Jie ^{[1
,2
]}

Wan, Qing ^{[1
,2
]}

机构：

[1] Hunan Univ, Minist Educ, Key Lab Micronano Optoelect Devices, Changsha 410082, Hunan, Peoples R China

[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Chitosan; dual-gate thin-film transistors (TFTs); paper electronics; threshold voltage modulation; TRANSISTORS;

D O I：

10.1109/LED.2012.2231661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-voltage flexible dual-gate indium-tin-oxide-based thin-film transistors (TFTs) are self-assembled on SiO2-covered paper substrates by one shadow mask diffraction method. Solution-processed chitosan gate dielectric films have a large gate specific capacitance (5.8 mu F/cm(2)) due to the electric-double-layer effect. The subthreshold swing, drain-current on/off ratio, and field-effect mobility are estimated to be 80 mV/dec, 4 x 10(6), and 9.3 cm(2)/V . s, respectively. Low-voltage operation mechanism and threshold voltage modulation of such dual-gate paper TFTs are investigated.

引用

页码：259 / 261

页数：3

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