Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates

被引：29
|
作者：
Dou, Wei [1 ,2 ]
Zhu, Liqiang [1 ,2 ]
Jiang, Jie [1 ,2 ]
Wan, Qing [1 ,2 ]
机构：
[1] Hunan Univ, Minist Educ, Key Lab Micronano Optoelect Devices, Changsha 410082, Hunan, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Chitosan; dual-gate thin-film transistors (TFTs); paper electronics; threshold voltage modulation; TRANSISTORS;
D O I：
10.1109/LED.2012.2231661
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-voltage flexible dual-gate indium-tin-oxide-based thin-film transistors (TFTs) are self-assembled on SiO2-covered paper substrates by one shadow mask diffraction method. Solution-processed chitosan gate dielectric films have a large gate specific capacitance (5.8 mu F/cm(2)) due to the electric-double-layer effect. The subthreshold swing, drain-current on/off ratio, and field-effect mobility are estimated to be 80 mV/dec, 4 x 10(6), and 9.3 cm(2)/V . s, respectively. Low-voltage operation mechanism and threshold voltage modulation of such dual-gate paper TFTs are investigated.
引用
收藏
页码：259 / 261
页数：3
相关论文
共 50 条
  • [41] The asymmetry dual-gate a-Si:H thin film transistors
    Liang, Chung-Yu
    Chen, Hsin-Li
    Yeh, F. S.
    Chang, T. C.
    IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2007, : 1971 - 1974
  • [42] The dual-gate model for pentameric ligand-gated ion channels activation and desensitization
    Gielen, Marc
    Corringer, Pierre-Jean
    JOURNAL OF PHYSIOLOGY-LONDON, 2018, 596 (10): : 1873 - 1902
  • [43] High-Voltage a-Si TFTs Using Dual-Gate With a Common Gate Structure by Channel Electrons Concentration Regulation
    Liu, Jiaze
    Liu, Rongyue
    Zhan, Shaohu
    Luo, Qin
    Chen, Rifei
    Cheng, Xing
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (04) : 1682 - 1686
  • [44] Indium-gallium-zinc-oxide thin-film transistor with a planar split dual-gate structure
    Liu, Yu-Rong
    Liu, Jie
    Song, Jia-Qi
    Lai, Pui-To
    Yao, Ruo-He
    MODERN PHYSICS LETTERS B, 2017, 31 (35):
  • [45] Water stable Organic Thin Film Transistors (TFTs) made on flexible substrates
    Rapisarda, Matteo
    Calvi, Sabrina
    Valletta, Antonio
    Fortunato, Guglielmo
    Mariucci, Luigi
    Greco, Maurizio
    Vinciguerra, Vincenzo
    2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2015, : 1430 - 1433
  • [46] SOI dual-gate ISFET with variable oxide capacitance and channel thickness
    Park, Jin-Kwon
    Jang, Hyun-June
    Park, Jong-Tae
    Cho, Won-Ju
    SOLID-STATE ELECTRONICS, 2014, 97 : 2 - 7
  • [47] Effects of Unisolated Top Gate on Performance of Dual-Gate InGaZnO Thin-Film Transistor
    Zhang, Chao
    Huang, Xiaodong
    2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM, 2023,
  • [48] Gate-Tunable Potential Barrier on Dual-Gate Graphene Transistor with Fluorocarbon Thin Film
    Yi, Yoonhyuck
    Yun, Yoojoo
    Cho, Eunmi
    Jeon, Jinho
    Lee, Hyunkyung
    Kim, Byeongwan
    Ha, Dong Han
    Lee, Sang-Jin
    Kang, Haeyong
    ADVANCED MATERIALS INTERFACES, 2023, 10 (11)
  • [49] A flexible dual-gate hetero-synaptic transistor for spatiotemporal information processing
    Liu, Xuerong
    Sun, Cui
    Guo, Zhecheng
    Zhang, Yuejun
    Zhang, Zheng
    Shang, Jie
    Zhong, Zhicheng
    Zhu, Xiaojian
    Yu, Xue
    Li, Run-Wei
    NANOSCALE ADVANCES, 2022, 4 (11): : 2412 - 2419
  • [50] Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates
    Dou, Wei
    Tan, Yuanyuan
    ACS OMEGA, 2019, 4 (25): : 21417 - 21420
12345