Negative Differential Resistance in Buried-Channel GexC1-x pMOSFETs

被引：6
|
作者：
Liu, En-Shao [1 ]
Kelly, David Q. [2 ]
Donnelly, Joseph P. [1 ]
Tutuc, Emanuel [1 ]
Banerjee, Sanjay K. [1 ]
机构：
[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
[2] Texas Instruments Inc, Dallas, TX 75243 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 02期
关键词：
Charge traps; germanium/carbon alloy (GexC1-x); germanium (Ge); negative differential resistance (NDR); pMOSFETs; real-space transfer (RST); REAL-SPACE TRANSFER; ELECTRON-TRANSFER; GERMANIUM; TRANSPORT; HETEROSTRUCTURES; VELOCITY; DEVICES; GATE; SI;
D O I：
10.1109/LED.2008.2009364
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study the device characteristics of Si-capped GexC1-x pMOSFETs from room temperature down to 77 K. The output characteristics of these devices reveal a negative differential resistance (NDR) at temperatures below 150 K. Our measurements indicate a higher effective carrier mobility in the buried-channel GexC1-x. with respect to the Si-reference sample, which suggests that the observed NDR is due to real-space transfer of hot holes from the higher mobility GexC1-x channel layer into the lower mobility Si cap layer.
引用
收藏
页码：136 / 138
页数：3
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