Investigation of a step-doped-channel negative-differential-resistance transistor

被引：0
|
作者：
Laih, LW
Cheng, SY
Lin, KW
Lin, PH
Chen, JY
Wang, SC
Liu, WC
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 5A期
关键词：
step-doped-channel (SDC); negative-differential resistance (NDR); real space transfer (RST); peak-to-valley current ratio (PVCR);
D O I：
10.1143/JJAP.36.2617
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An interesting AlGaAs/InGaAs/GaAs step-doped channel negative-differential-resistance transistor (SDCNDRT) has been fabricated. The SDCNDRT is based on a previously reported step-doped-channel field-effect transistor, (SDCFET). The N-shaped negative-differential resistance (NDR) are three-terminal-controlled NDR phenomena. We believe that the NDR phenomena can be attributed to the real space transfer (RST). A maximum drain current and peak-to-valley current ratio (PVCR) of 59 mA and 6.6 are obtained, respectively. The high drain current and PVCR indicate the potential of the SDCFET for practical circuit applications.
引用
收藏
页码：2617 / 2620
页数：4
相关论文
共 50 条
  • [1] Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)
    Laih, LW
    Wu, CZ
    Cheng, SY
    Tsai, JH
    Liu, WC
    ELECTRONICS LETTERS, 1996, 32 (21) : 2014 - 2015
  • [2] Investigation of InGaAs based pseudomorphic step-doped-channel field-effect transistor (SDCFET)
    Lin, KW
    Laih, LW
    Liu, WC
    SOLID-STATE ELECTRONICS, 1997, 41 (03) : 381 - 385
  • [3] Negative-differential-resistance (NDR) superlattice-emitter transistor
    Lour, Wen-Shiung, 1600, (30):
  • [4] NEGATIVE-DIFFERENTIAL-RESISTANCE (NDR) SUPERLATTICE-EMITTER TRANSISTOR
    LOUR, WS
    LIU, WC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (4A): : L564 - L567
  • [5] Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions
    Tsai, Jung-Hui
    Kang, Yu-Chi
    Hsu, I-Hsuan
    Weng, Tzu-Yen
    MATERIALS CHEMISTRY AND PHYSICS, 2006, 100 (2-3) : 340 - 344
  • [6] HETEROSTRUCTURE CONFINEMENT EFFECT ON THE NEGATIVE-DIFFERENTIAL-RESISTANCE (NDR) BIPOLAR-TRANSISTOR
    LIU, WC
    TSAI, JH
    LAIH, LW
    CHENGZU
    THEI, KB
    LOUR, WS
    GUO, DF
    SUPERLATTICES AND MICROSTRUCTURES, 1995, 17 (04) : 445 - 456
  • [7] Investigation of InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches
    Tsai, JH
    Chu, YJ
    Chen, JS
    Zhu, KP
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 2305 - 2308
  • [8] Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor
    Wang, WC
    Pan, HJ
    Thei, KB
    Lin, KW
    Yu, KH
    Cheng, CC
    Cheng, SY
    Liu, WC
    SUPERLATTICES AND MICROSTRUCTURES, 2001, 29 (05) : 359 - 365
  • [9] Multipeak negative-differential-resistance molecular device
    Mentovich, Elad D.
    Kalifa, Itshak
    Tsukernik, Alexander
    Caster, Ariel
    Rosenberg-Shraga, Natalie
    Marom, Hanit
    Gozin, Michael
    Richter, Shachar
    SMALL, 2008, 4 (01) : 55 - 58
  • [10] Negative-differential-resistance device responds to light
    不详
    LASER FOCUS WORLD, 2002, 38 (07): : 13 - 13
12345