Negative Differential Resistance in Buried-Channel GexC1-x pMOSFETs

被引：6

作者：

Liu, En-Shao ^{[1
]}

Kelly, David Q. ^{[2
]}

Donnelly, Joseph P. ^{[1
]}

Tutuc, Emanuel ^{[1
]}

Banerjee, Sanjay K. ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

[2] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 02期

关键词：

Charge traps; germanium/carbon alloy (GexC1-x); germanium (Ge); negative differential resistance (NDR); pMOSFETs; real-space transfer (RST); REAL-SPACE TRANSFER; ELECTRON-TRANSFER; GERMANIUM; TRANSPORT; HETEROSTRUCTURES; VELOCITY; DEVICES; GATE; SI;

D O I：

10.1109/LED.2008.2009364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the device characteristics of Si-capped GexC1-x pMOSFETs from room temperature down to 77 K. The output characteristics of these devices reveal a negative differential resistance (NDR) at temperatures below 150 K. Our measurements indicate a higher effective carrier mobility in the buried-channel GexC1-x. with respect to the Si-reference sample, which suggests that the observed NDR is due to real-space transfer of hot holes from the higher mobility GexC1-x channel layer into the lower mobility Si cap layer.

引用

页码：136 / 138

页数：3

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