On a semiconductor laser with a p-n tunnel junction with radiation emission through the substrate

被引：1

作者：

Kolpakov, D. A. ^{[1
]}

Zvonkov, B. N. ^{[1
]}

Nekorkin, S. M. ^{[1
]}

Dikareva, N. V. ^{[1
]}

Aleshkin, V. Ya. ^{[2
,3
]}

Dubinov, A. A. ^{[2
,3
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod, Phys Tech Res Inst, Nizhnii Novgorod 603950, Russia

[2] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[3] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2015年 / 49卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

QUANTUM-WELLS; EFFICIENCY;

D O I：

10.1134/S1063782615110123

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A multiwell interband cascade laser with a tunnel junction within a single waveguide and radiation emission through the substrate is implemented for the first time. It is shown that such a laser heterostructure design provides the more efficient population of quantum wells in comparison with a conventional multiwell laser with radiation emission through the substrate, due to which the lasing threshold is significantly lowered.

引用

页码：1440 / 1442

页数：3

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