On a semiconductor laser with a p-n tunnel junction with radiation emission through the substrate

被引：1
|
作者：
Kolpakov, D. A. [1 ]
Zvonkov, B. N. [1 ]
Nekorkin, S. M. [1 ]
Dikareva, N. V. [1 ]
Aleshkin, V. Ya. [2 ,3 ]
Dubinov, A. A. [2 ,3 ]
机构：
[1] Lobachevsky State Univ Nizhny Novgorod, Phys Tech Res Inst, Nizhnii Novgorod 603950, Russia
[2] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
[3] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTORS | 2015年 / 49卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
QUANTUM-WELLS; EFFICIENCY;
D O I：
10.1134/S1063782615110123
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A multiwell interband cascade laser with a tunnel junction within a single waveguide and radiation emission through the substrate is implemented for the first time. It is shown that such a laser heterostructure design provides the more efficient population of quantum wells in comparison with a conventional multiwell laser with radiation emission through the substrate, due to which the lasing threshold is significantly lowered.
引用
收藏
页码：1440 / 1442
页数：3
相关论文
共 50 条
  • [31] Analysis of carbon nanotube intramolecular p-n tunnel junction transistors
    Richardson, WH
    [J]. 2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGS, 2003, : 753 - 755
  • [32] Photovoltage formation across GaAs p-n junction under illumination of intense laser radiation
    Asmontas, Steponas
    Gradauskas, Jonas
    Suziedelis, Algirdas
    Silenas, Aldis
    Sirmulis, Edmundas
    Vaicikauskas, Viktoras
    Vaiciunas, Vytautas
    Zalys, Ovidijus
    Fedorenko, Leonid
    Bulat, Lev
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 2016, 48 (09)
  • [33] CHARACTERISTIC FEATURES OF RADIATION OF A P-N JUNCTION GAAS LASER WITH A NONLINEAR PASSIVE ELEMENT IN RESONATOR
    BYKOVSKI.YA
    GONCHARO.IG
    MASLOV, VA
    SMIRNOV, VL
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1522 - &
  • [34] Liquid-state semiconductor p-n junction at 903 K
    Sasaki, Yasushi
    Hirano, Yoshihiko
    Iguchi, Manabu
    Ishii, Kuniyoshi
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (23)
  • [35] Theoretical concepts of operation of a semiconductor detector based on a p-n junction
    Bakaleinikov, LA
    Flegontova, EY
    Pogregitskii, KY
    Eremin, IV
    [J]. TECHNICAL PHYSICS, 2004, 49 (09) : 1181 - 1190
  • [36] SILICON P-N JUNCTION RADIATION DETECTORS FOR TELSTAR SATELLITE
    BUCK, TM
    RODGERS, JW
    WHEATLEY, GH
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) : 294 - +
  • [37] Electric field distribution in the base of semiconductor p-n junction diode
    N. S. Aramyan
    [J]. Journal of Contemporary Physics (Armenian Academy of Sciences), 2007, 42 (1) : 34 - 37
  • [38] Theoretical concepts of operation of a semiconductor detector based on a p-n junction
    L. A. Bakaleinikov
    E. Yu. Flegontova
    K. Yu. Pogrebitskii
    I. V. Eremin
    [J]. Technical Physics, 2004, 49 : 1181 - 1190
  • [39] A method of the thermal resistance measurements of semiconductor devices with p-n junction
    Zarebski, Janusz
    Gorecki, Krzysztof
    [J]. MEASUREMENT, 2008, 41 (03) : 259 - 265
  • [40] PHOTO-EMF OF P-N JUNCTION IN A STRONGLY EXCITED SEMICONDUCTOR
    BLINOV, LM
    VAVILOV, VS
    GALKIN, GN
    [J]. JETP LETTERS-USSR, 1966, 3 (09): : 234 - &
12345