Ultrafast Degenerate Pump-Probe Studies of SI-GaAs and LT-GaAs

被引：0
|
作者：
Anusha, P. T. [1 ]
Tewari, Surya P. [2 ]
Rao, S. Venugopal [1 ]
机构：
[1] Univ Hyderabad, ACRHEM, Hyderabad 500046, Andhra Pradesh, India
[2] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
来源：
2012 INTERNATIONAL CONFERENCE ON FIBER OPTICS AND PHOTONICS (PHOTONICS) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the measurements of excited state dynamics in LT-GaAs, SI-GaAs using picosecond pump-probe experiment at 800 nm performed in non-resonant conditions (photon energy > E-g of GaAs). The intensity dependent dynamics are also investigated.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] SI-GAAS(001) SUPERLATTICES
    SORBA, L
    BRATINA, G
    FRANCIOSI, A
    TAPFER, L
    SCAMARCIO, G
    SPAGNOLO, V
    MOLINARI, E
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (13) : 1570 - 1572
  • [32] Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates
    Petrushkov, M. O.
    Putyato, M. A.
    Gutakovsky, A. K.
    Preobrazhenskii, V. V.
    Loshkarev, I. D.
    Emelyanov, E. A.
    Semyagin, B. R.
    Vasev, A. V.
    [J]. 3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741
  • [33] Diameter of As clusters in LT-GaAs by Raman spectroscopy
    Toufella, M
    Puech, P
    Carles, R
    Bedel, E
    Fontaine, C
    Claverie, A
    Benassayag, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) : 2929 - 2933
  • [34] Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique
    Liu, B
    Li, Q
    Xu, ZY
    Ge, WK
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (18) : 3923 - 3930
  • [35] Interfacial barrier characteristics of LT-GaAs on low doped GaAs layers
    Lipka, K.M.
    Splingart, B.
    Zhang, X.
    Poese, M.
    Panzlaff, K.
    Kohn, E.
    [J]. Materials science & engineering. B, Solid-state materials for advanced technology, 1993, B22 (01): : 55 - 60
  • [36] A comprehensive study of ultrafast carrier dynamics of LT-GaAs: Above and below bandgap regions
    Vashistha, Nikita
    Kumar, Mahesh
    Singh, Rajiv K.
    Panda, Debiprasad
    Tyagi, Lavi
    Chakrabarti, Subhananda
    [J]. PHYSICA B-CONDENSED MATTER, 2021, 602
  • [37] LT-GAAS MISFET STRUCTURE FOR POWER APPLICATION
    LIPKA, KM
    SPLINGART, B
    ERBEN, U
    KOHN, E
    [J]. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 99 - 104
  • [38] THz photomixer with milled nanoelectrodes on LT-GaAs
    Gediminas Seniutinas
    Gediminas Gervinskas
    Evan Constable
    Arūnas Krotkus
    Gediminas Molis
    Gintaras Valušis
    Roger A. Lewis
    Saulius Juodkazis
    [J]. Applied Physics A, 2014, 117 : 439 - 444
  • [39] THz photomixer with milled nanoelectrodes on LT-GaAs
    Seniutinas, Gediminas
    Gervinskas, Gediminas
    Constable, Evan
    Krotkus, Arunas
    Molis, Gediminas
    Valusis, Gintaras
    Lewis, Roger A.
    Juodkazis, Saulius
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 117 (02): : 439 - 444
  • [40] Strain relaxation in LT-GaAs by the agglomeration of As antisites
    Staab, TEM
    Nieminen, RM
    Luysberg, M
    Gebauer, J
    Frauenheim, T
    [J]. PHYSICA B-CONDENSED MATTER, 2003, 340 : 293 - 298
12345