Interfacial barrier characteristics of LT-GaAs on low doped GaAs layers

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|
作者：
Lipka, K.M. [1 ]
Splingart, B. [1 ]
Zhang, X. [1 ]
Poese, M. [1 ]
Panzlaff, K. [1 ]
Kohn, E. [1 ]
机构：
[1] Univ of Ulm, Ulm, Germany
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1993年 / B22卷 / 01期
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页码：55 / 60
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