Diameter of As clusters in LT-GaAs by Raman spectroscopy

被引：25
|
作者：
Toufella, M
Puech, P
Carles, R
Bedel, E
Fontaine, C
Claverie, A
Benassayag, G
机构：
[1] Univ Toulouse 3, Lab Phys Solides LPST ESA 5477, F-31062 Toulouse 4, France
[2] CNRS, LAAS, F-31077 Toulouse, France
[3] CNRS, CEMES, F-31055 Toulouse 4, France
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 05期
关键词：
D O I：
10.1063/1.369058
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Raman scattering measurements on low temperature GaAs layers are presented. Phonons in both GaAs and As are studied. The transition from diluted As in the GaAs matrix to the small As clusters formed after annealing is analyzed. This is performed by observing the reduction of the GaAs bound charge, i.e., the longitudinal optical GaAs frequency downshift, to the appearance of the crystalline As vibrational mode. From the phonon shifts of crystalline As, the diameter and the strain are derived, accordingly to transmission electron microscopy measurements. (C) 1999 American Institute of Physics. [S0021-8979(99)06105-8].
引用
收藏
页码：2929 / 2933
页数：5
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