Low-Frequency Noise Characteristics of In-Doped ZnO Ultraviolet Photodetectors

被引:31
|
作者
Chang, Shoou-Jinn [1 ,2 ]
Duan, Bi-Gui [1 ,2 ]
Hsiao, Chih-Hung [1 ,2 ]
Young, Sheng-Joue [3 ]
Wang, Bo-Chin [1 ,2 ]
Kao, Tsung-Hsien [1 ,2 ]
Tsai, Kai-Shiang [4 ]
Wu, San-Lein [4 ]
机构
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[3] Natl Formosa Univ, Dept Elect Engn, Yunlin 632, Taiwan
[4] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan
关键词
IZO; nanorod; hydrothermal; PD; noise; NANOWIRE ARRAYS;
D O I
10.1109/LPT.2013.2280719
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the growth of vertically aligned indium-doped ZnO (IZO) nanorods on a glass substrate using a low-temperature hydrothermal method. An IZO nanorod metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) was also fabricated. It was found that the UV-to-visible rejection ratio of the fabricated PD was similar to 109 when biased at 1 V with a sharp cutoff at 390 nm. With an incident light wavelength of 390 nm and an applied bias of 1 V, it was found that measured responsivity of the PD was 2.5 A/W. Furthermore, it was also found that the noise equivalent power and detectivity of the fabricated IZO nanorod MSM PD were 1.42 x 10(-10) W and 1.44 x 10(11) cm.Hz(0.5).W-1, respectively.
引用
收藏
页码:2043 / 2046
页数:4
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