Low-Frequency Noise Characteristics of In-Doped ZnO Ultraviolet Photodetectors

被引：31

作者：

Chang, Shoou-Jinn ^{[1
,2
]}

Duan, Bi-Gui ^{[1
,2
]}

Hsiao, Chih-Hung ^{[1
,2
]}

Young, Sheng-Joue ^{[3
]}

Wang, Bo-Chin ^{[1
,2
]}

Kao, Tsung-Hsien ^{[1
,2
]}

Tsai, Kai-Shiang ^{[4
]}

Wu, San-Lein ^{[4
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[3] Natl Formosa Univ, Dept Elect Engn, Yunlin 632, Taiwan

[4] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2013年 / 25卷 / 21期

关键词：

IZO; nanorod; hydrothermal; PD; noise; NANOWIRE ARRAYS;

D O I：

10.1109/LPT.2013.2280719

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the growth of vertically aligned indium-doped ZnO (IZO) nanorods on a glass substrate using a low-temperature hydrothermal method. An IZO nanorod metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) was also fabricated. It was found that the UV-to-visible rejection ratio of the fabricated PD was similar to 109 when biased at 1 V with a sharp cutoff at 390 nm. With an incident light wavelength of 390 nm and an applied bias of 1 V, it was found that measured responsivity of the PD was 2.5 A/W. Furthermore, it was also found that the noise equivalent power and detectivity of the fabricated IZO nanorod MSM PD were 1.42 x 10(-10) W and 1.44 x 10(11) cm.Hz(0.5).W-1, respectively.

引用

页码：2043 / 2046

页数：4

共 50 条

[31] Low-frequency noise characteristics of AlGaN/GaN HEMT
Makihara, H
Akita, M
Ohno, Y
Kishimoto, S
Maezawa, K
Mizutani, T
COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 113 - 117
[32] Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures
Pavelka, J.
Tanuma, N.
Tacano, M.
Sikula, J.
Handel, P. H.
NOISE AND FLUCTUATIONS, 2009, 1129 : 183 - +
[33] Low-frequency noise characteristics of AlSb/InAsSb HEMTs
Kruppa, W
Boos, JB
Bennett, BR
Tinkham, BP
SOLID-STATE ELECTRONICS, 2004, 48 (10-11) : 2079 - 2084
[34] Low noise ρ-π-n GaN ultraviolet photodetectors
Appl Phys Lett, 16 (2334):
[35] Low-Frequency Noise Performance of Al-Doped ZnO Nanorod Photosensors by a Low-Temperature Hydrothermal Method
Wang, Zi-Hao
Yu, Hsin-Chieh
Yang, Chih-Chiang
Yeh, Hsin-Ting
Su, Yan-Kuin
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (08) : 3206 - 3212
[36] Low-frequency noise in non-homogeneously doped semiconductor
Asriyan, HV
Gasparyan, FV
Aroutiounian, VM
Melkonyan, SV
Soukiassian, P
SENSORS AND ACTUATORS A-PHYSICAL, 2004, 113 (03) : 338 - 343
[37] Spectroscopy of low-frequency noise in δ-doped GaAs grown by MBE
Chen, XY
Koenraad, P
Hooge, FN
Wolter, JH
NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 1997, : 457 - 460
[38] CO sensing characteristics of In-doped ZnO semiconductor nanoparticles
Dhahri, R.
Hjiri, M.
El Mir, L.
Alamri, H.
Bonavita, A.
Iannazzo, D.
Leonardi, S. G.
Neri, G.
JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES, 2017, 2 (01): : 34 - 40
[39] Noise Properties of Fe-ZnO Nanorod Ultraviolet Photodetectors
Chang, Shoou-Jinn
Liu, Chung-Wei
Hsiao, Chih-Hung
Lo, Kuang-Yao
Young, Sheng-Joue
Kao, Tsung-Hsien
Tsai, Kai-Shiang
Wu, San-Lein
IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (21) : 2089 - 2092
[40] Low-frequency noise in high performance and stability of Li-doped ZnO thin-film transistors
Abliz, Ablat
Wan, Da
Duan, Haiming
Yang, Linyu
Mamat, Mamatrishat
Chen, Henglei
Xu, Lei
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (41)

← 1 2 3 4 5 →