Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

被引：11

作者：

Kwon, Dongseok ^{[1
,2
]}

Shin, Wonjun ^{[1
,2
]}

Bae, Jong-Ho ^{[3
]}

Lim, Suhwan ^{[4
]}

Park, Byung-Gook ^{[1
,2
]}

Lee, Jong-Ho ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Seoul 08826, South Korea

[3] Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea

[4] Samsung Elect Co Ltd, Flash Technol Dev Team, Seoul 16677, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

Low-frequency noise; gated Schottky diodes; neuromorphic computing; 1/F NOISE; BARRIER DIODES; DEVICES; FLASH; EFFICIENT;

D O I：

10.1109/LED.2021.3051197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the low-frequency noise (LFN) characteristics of the 3-terminal n-type gated Schottky diode (GSD) were investigated. The GSD shows the 1/f noise behavior, and the noise origin depends on the operating current (I-D) of the GSD. The 1/f noise is mainly generated by the barrier height fluctuation near the metal-semiconductor interface at the reverse Schottky diode (SD) in the low I-D region, and by the carrier number fluctuation (CNF) at the n-type FET in the high I-D region. The LFN characteristics in the low I-D region are strongly affected by the temperature. With increasing temperature, the transition of the 1/f noise origin from the reverse SD to the n-type FET occurs at lower I-D.

引用

页码：442 / 445

页数：4

共 50 条

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[2] Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes
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