Study of deep levels in Schottky/CuInSe2 single-crystal devices by deep-level transient spectroscopy measurements

Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe(2) diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe(2) diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe(2) diodes. Th us, the importance of using Schottky diodes lies in the elimination of the window n-type layer diffusion into CulnSe(2) material to reveal the intrinsic properties of the semiconductor, A comparison between previously reported defect states in Cd(Zn)S-CulnSe(2) and those found in Schottky/CulnSe(2) is made. The defect concentration is calculated as well as the capture cross-section, Some of the defect levels agree with previously published data. A common feature exhibited in all the measured samples is that the capacitance transient is non-exponential, and the DLTS spectrum is relatively broad, due to the contribution of two or more closely spaced levels.