Deep level transient spectroscopy study of electron-irradiated CuInSe2 thin films

被引：1
|
作者：
Okada, H [1 ]
Fujita, N
Lee, HS
Wakahara, A
Yoshida, A
Ohshima, T
Itoh, H
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan
[2] Japan Atom Energy Res Inst, Takasaki, Gumma 3701292, Japan
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 09期
关键词：
CuInSe2; electron irradiation; deep level transient spectroscopy (DLTS); Hall-effect measurement;
D O I：
10.1007/s11664-003-0234-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1 x 10(17) cm(-2). In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.
引用
收藏
页码：L5 / L8
页数：4
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